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| NPN Silicon AF Transistors BC 337 BC 338 High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 327, BC 328 (PNP) q 2 1 3 Type BC 337 BC 337-16 BC 337-25 BC 337-40 BC 338 BC 338-16 BC 338-25 BC 338-40 Marking - Ordering Code Q62702-C313 Q62702-C313-V3 Q62702-C313-V1 Q62702-C313-V2 Q62702-C314 Q62702-C314-V1 Q62702-C314-V2 Q62702-C314-V3 Pin Configuration 1 2 3 C B E Package1) TO-92 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BC 337 BC 338 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case1) Rth JA Rth JC Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values BC 337 45 50 5 BC 338 25 30 800 1 100 200 625 150 Unit V mA A mA mW C - 65 ... + 150 200 135 K/W 1) Mounted on Al heat sink 15 mm x 25 mm x 0.5 mm. Semiconductor Group 2 BC 337 BC 338 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 337 BC 338 Collector-base breakdown voltage IC = 100 A BC 337 BC 338 Emitter-base breakdown voltage IE = 10 A Collector cutoff current VCB = 25 V VCB = 45 V VCB = 25 V, TA = 150 C VCB = 45 V, TA = 150 C Emitter cutoff current VEB = 4 V DC current gain1) IC = 100 mA; VCE = 1 V BC 337/16; BC 338/16 BC 337/25; BC 338/25 BC 337/40; BC 338/40 IC = 300 mA; VCE = 1 V BC 337/16; BC 338/16 BC 337/25; BC 338/25 BC 337/40; BC 338/40 Collector-emitter saturation voltage1) IC = 500 mA; IB = 50 mA Base-emitter saturation voltage IC = 500 mA; IB = 50 mA VCEsat VBEsat 60 100 170 - - - - - - - - - - 0.7 2 V BC 338 BC 337 BC 338 BC 337 IEB0 hFE 100 160 250 160 250 350 250 400 630 V(BR)EB0 ICB0 - - - - - - - - - - 100 100 10 10 100 nA nA A A Values typ. max. Unit V(BR)CE0 45 25 V(BR)CB0 50 30 5 - - - - - - - - - - V nA - 1) Pulse test: t 300 s, D 2 %. Semiconductor Group 3 BC 337 BC 338 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Output capacitance VCB = 10 V, f = 1 MHz Input capacitance VEB = 0.5 V, f = 1 MHz fT Cobo Cibo - - - 170 8 60 - - - MHz pF Values typ. max. Unit Semiconductor Group 4 BC 337 BC 338 Total power dissipation Ptot = f (TA; TC) Permissible pulse load RthJA = f (tp) Collector current IC = f (VBE) VCE = 1 V Collector cutoff current ICB0 = f (TA) VCB = 45 V Semiconductor Group 5 BC 337 BC 338 DC current gain hFE = f (IC) VCE = 1 V Transition frequency fT = f (IC) f = 20 MHz, TA = 25 C Collector-emitter saturation voltage VCEsat = f (IC) hFE = 10 Base-emitter saturation voltage VBEsat = f (IC) hFE = 10 Semiconductor Group 6 |
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